Copper penetration into porous ultra-low-κ methyl silsesquioxane during selective CVD

Chemical Vapor Deposition

Volumn 9, Issue 6, 2003, Pages 305-307

  Jezewsk, Christopher ^a   Lanford, William A ^a   Senkevich, Jay J ^b   Ye, Dexian ^b   Lu, Toh Ming ^b   Jin, Changming ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); METALLIC FILMS; PERMITTIVITY; POROSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS;

ORGANOSILICATE; PROCESING COMPATIBILITY; SOLID MATERIALS;

POROUS MATERIALS;

EID: 3242736631     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200304155     Document Type: Article

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