In situ temperature control of molecular beam epitaxy growth using band-edge thermometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1502-1506

  Johnson, Shane ^a   Kuo, Chau Hong ^a   Boonzaayer, Martin ^a   Braun, Wolfgang ^a   Koelle, Ulrich ^a   Zhang, Yong Hang ^a   Roth, John ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043057134     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589975     Document Type: Article

References (12)

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4. E. S. Hellman and J. S. Harris, Jr., J. Cryst. Growth 81, 38 (1987).
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6. D. M. Kirillov and R. A. Powell, U.S. Patent No. 5,118,200 (1992).
7. S. R. Johnson and T. Tiedje, J. Cryst. Growth 175/176, 273 (1997).
8. S. R. Johnson, Ph.D. thesis, University of British Columbia, 1996.
9. S. R. Johnson and T. Tiedje, J. Appl. Phys. 78, 5609 (1995).
10. M. Beaudoin, S. R. Johnson, A. J. G. DeVries, A. Mohades-Kassai, and T. Tiedje, Mater. Res. Soc. Symp. Proc. 421, 367 (1996).
11. J. A. Roth and A. Bennett, J. Appl. Phys. (submitted).
12. B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, Appl. Phys. Lett. 61, 2338 (1992).