Phonon scattering of excitons and biexcitons in ZnO

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1270-1272

  Hazu, K ^a   Sota, T ^a   Adachi, S ^b   Chichibu, Sf ^c   Cantwell, G ^d   Reynolds, D C ^e   Litton, C W ^e  

^a WASEDA UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d Research Zn Technology Inc   (United States)

^e AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN CONSTANTS; PHASE RELAXATION; VALENCE BANDS;

BINDING ENERGY; ENERGY DISSIPATION; EXCITONS; LIGHT SCATTERING; OPTICAL DEVICES; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; ZINC OXIDE;

PHONONS;

EID: 3242731498     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760831     Document Type: Article

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