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Volumn 72, Issue 5, 1998, Pages 557-559
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Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing
a a b b c c |
Author keywords
[No Author keywords available]
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Indexed keywords
DENSITY (SPECIFIC GRAVITY);
EXCITONS;
FOUR WAVE MIXING;
NUMERICAL METHODS;
OPTICAL VARIABLES MEASUREMENT;
SAPPHIRE;
SEMICONDUCTING FILMS;
TEMPERATURE;
DEGENERATE FOUR WAVE MIXING;
EXCITON IMPURITY SCATTERING;
GALLIUM NITRIDE;
PHONON EXCITON DEPHASING;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032472657
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.120757 Document Type: Article |
Times cited : (18)
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References (14)
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