Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1460-1462

  Pei, C W ^a   Heroux J B ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR SPECTROSCOPY; MOLYBDENUM; OPTOELECTRONIC DEVICES; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTOR LASERS; SOLDERING ALLOYS; STRAIN; SUBSTRATES; THRESHOLD VOLTAGE;

DEOXIDATION; DISSOCIATION ENERGY; FICK'S LAW; STRAIN COMPENSATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 3242686182     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1740768     Document Type: Conference Paper

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