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Volumn 113, Issue 3, 2004, Pages 350-354

Diaphragmless pressure sensor

Author keywords

Multiplicative microelectronic pressure sensor; Pressure sensor; Semiconductor sensor

Indexed keywords

ANISOTROPY; DIAPHRAGMS; ELASTIC MODULI; ETCHING; LITHOGRAPHY; SILICON; SILICON WAFERS; SUBSTRATES;

EID: 3242683210     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.03.073     Document Type: Article
Times cited : (1)

References (6)
  • 1
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    • (1989) Sens. Rev. , vol.9 , pp. 33-36
    • Andrian, P.1    Vella, E.2
  • 2
    • 3242728919 scopus 로고
    • Pressure transducer and method for fabricating same, US Patent No. 4 838 088, G01L 7/08, 9/12 (13 June)
    • K. Merakami, Pressure transducer and method for fabricating same, US Patent No. 4 838 088, G01L 7/08, 9/12 (13 June 1989).
    • (1989)
    • Merakami, K.1
  • 3
    • 3242665614 scopus 로고    scopus 로고
    • A capacitive pressure sensor fabricated by a combination of SIMOX substrates and novel etching techniques
    • Medler A., Patel C., Butcher J. A capacitive pressure sensor fabricated by a combination of SIMOX substrates and novel etching techniques. J. Commun. 47:1996;6-8.
    • (1996) J. Commun. , vol.47 , pp. 6-8
    • Medler, A.1    Patel, C.2    Butcher, J.3
  • 4
    • 0033882073 scopus 로고    scopus 로고
    • A monolithically integrated surface micromachined touch mode capacitive pressure sensor
    • Guo S., Guo J., Ko W.H. A monolithically integrated surface micromachined touch mode capacitive pressure sensor. Sens. Actuat. 80:2000;224-232.
    • (2000) Sens. Actuat. , vol.80 , pp. 224-232
    • Guo, S.1    Guo, J.2    Ko, W.H.3
  • 5
    • 3242655865 scopus 로고
    • Semiconductor transducer device, US Patent No. 3 686 542, H01L 11/00, 15/00 (22 September)
    • W. Rindner, A. Jannini, A. Garfein, Semiconductor transducer device, US Patent No. 3 686 542, H01L 11/00, 15/00 (22 September 1972).
    • (1972)
    • Rindner, W.1    Jannini, A.2    Garfein, A.3
  • 6
    • 3242717199 scopus 로고
    • High-sensitivity and high-speed pressure sensor with tunnel diode
    • in Russian
    • Vyatkin A.P., Krivorotov N.P., Schegol S.S. High-sensitivity and high-speed pressure sensor with tunnel diode. Dev. Techn. Exp. 1:1988;186-188. (in Russian).
    • (1988) Dev. Techn. Exp. , vol.1 , pp. 186-188
    • Vyatkin, A.P.1    Krivorotov, N.P.2    Schegol, S.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.