Microstructure and preferred orientation in rf sputter deposited AlN thin film

Journal of Materials Science Letters

Volumn 19, Issue 18, 2000, Pages 1625-1627

  Fujiki, M ^a,b   Takahashi, M ^a   Kikkawa, S ^a   Kanamaru, F ^a  

^a OSAKA UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EVAPORATION; ION BEAMS; MAGNETRON SPUTTERING; MORPHOLOGY; PIEZOELECTRIC MATERIALS; SPUTTER DEPOSITION; THERMAL EFFECTS; THIN FILMS;

ALUMINUM NITRIDE; REACTIVE SPUTTERING;

DIELECTRIC FILMS;

EID: 0034271375     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006701823810     Document Type: Article

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