Effect of pad surface roughness on SiO2 removal rate in-chemical mechanical polishing with ceria slurry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 733-735

  Yoshida, Masato ^a   Ono, Hiroshi ^a   Nishiyama, Masaya ^a   Ashizawa, Toranosuke ^a   Doi, Toshiro ^a,b  

^a High Performance Materials Department   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

Ceria (CeO2); Chemical mechanical polishing (CMP); Crystallite size; Pad; Particle size; Planarization; Removal rate; Surface roughness

Indexed keywords

CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CRYSTALLINE MATERIALS; SILICA; SLURRIES;

PAD; PLANARIZATION; REMOVAL RATE;

SURFACE ROUGHNESS;

EID: 32244443919     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.733     Document Type: Article

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