Polarization reversal property of ferroelectric thin film for ferroelectric memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 817-821

  Masuda, Yoichiro ^a   Echizen, Masahiro ^a  

^a HACHINOHE INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Activation field; Displacement current; Ferroelectric PLZT thin film; Polarization reversal; Viscosity of domain wall

Indexed keywords

FERROELECTRICITY; POLARIZATION; VISCOSITY;

ACTIVATION FIELD; POLARIZATION REVERSAL;

THIN FILMS;

EID: 32244431626     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.817     Document Type: Article

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