Domain pinning in GaAsAlGaAs quantum well infrared photodetectors

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Schneider, H ^a,b   Schonbein C ^a,c   Rehm, R ^a   Walther, M ^a   Koidl, P ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; MAGNETIC DOMAINS; PHOTOCONDUCTIVITY; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

LOW FIELD DOMAINS; PEAK CURRENT; SPATIAL DISTRIBUTION; VALLEY CURRENT;

INFRARED DETECTORS;

EID: 31944452669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171767     Document Type: Article

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