Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 355-358

  Rudan, M ^a   Reggiani, S ^a   Gnani, E ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY ASPECT RATIO; HALL VOLTAGE; PROBE POSITION;

EID: 31744450968     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256887     Document Type: Conference Paper

References (8)

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2. Mock, MS, Basic Theory of Stationary Numerical Models, in "Advances in CAD for VLSI", Vol. 1: Physics and Device Modeling, W. 'L. Engl ed., Elsevier Science Publ, 1986, pp. 159-194.
3. Madelung, O., Introduction to Solid-State Theory, Springer-Verlag, New York, 1981.
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5. Lippmann, HJ., Kuhit, F., "Eter GeometrieeinfVuss auf den transversalen magnetischen Wiederstandseffeckt bei rechteckformigen Halbleilerplatten", Z. f, Naturf., Vol. 13a, 1958, pp. 462-474.
6. Lippmann, HJ, Kuhrt, F, "Der Geometrieeinfluss auf den Hall-Effeki bei rechteckigen Halbleiterplatten", Z. f. Naturf., Vol. 13a, 1958, pp. 474-483.
7. Balles, H. P., Popovic, R. S., "Integrated Semiconductor Magnetic Field Sensors", Proc. of the IEEE, Vol. 74, no. 8, 1986, pp. 1107-1132.
8. Sze, S. M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.