Mocvd growth and properties of high-k dielectric praseodymium oxides layers on silicon

Proceedings - Electrochemical Society

Volumn PV 2005-09, Issue , 2005, Pages 936-943

  Abrutis, A ^a   Lukosius, M ^a   Kiziene, A ^a   Baumann, P K ^b   Schumacher, M ^b   Lindner, J ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEGRADATION; PARTIAL PRESSURE; PHASE TRANSITIONS; PRASEODYMIUM COMPOUNDS; SILICON; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION;

LIQUID INJECTION; OXYGEN PARTIAL PRESSURE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 31744440889     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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