Implementation of flash technology for ultra shallow junction formation: Challenges in process integration

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 515-520

  Foggiato, J ^a   Yoo, W S ^a  

^a WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION; DOPANT ACTIVATION; OPTICAL ENERGY; ULTRA SHALLOW JUNCTIONS;

ANNEALING; ARC LAMPS; DEFECTS; LEAKAGE CURRENTS; SILICON WAFERS;

SEMICONDUCTOR JUNCTIONS;

EID: 31544480124     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151903     Document Type: Article

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