Electrical properties of anodically oxidized Nb2O5 and Si-doped Nb2O5 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6664-6666

  Shimizu, Hirofumi ^a   Sato, Hirohumi ^a   Nishimura, Shigeoki ^b   Honda, Mitsutoshi ^b  

^a NIHON UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Anodic oxidation; Capacitance voltage curve; Current voltage curve; Nb; Nb Si

Indexed keywords

ANODIC OXIDATION; BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; NIOBIUM COMPOUNDS; PHASE DIAGRAMS; SILICON; THIN FILMS;

CAPACITANCE-VOLTAGE CURVE; CURRENT-VOLTAGE CURVE; NB-SI;

ELECTRIC PROPERTIES;

EID: 31544480092     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6664     Document Type: Article

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