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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8742-8746

Correlation between natural oxidation process and photoluminescence properties of hydrogenated Si nanocrystallites prepared by pulsed laser ablation

(4) Matsumoto, Kimihisa a,b Inada, Mitsuru a Umezu, Ikurou a Sugimura, Akira a

a KONAN UNIVERSITY (Japan)

b KOBE UNIVERSITY (Japan)

Author keywords

Laser ablation; Photoluminescence; Silicon nanocrystals; Surface oxidation

Indexed keywords

CHEMICAL BONDS; DIFFUSION; HYDROGENATION; LASER ABLATION; OXIDATION; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON;

PHOTOLUMINESCENCE PEAK; SILICON NANOCRYSTALS; SURFACE OXIDATION; WAVELENGTH;

NANOSTRUCTURED MATERIALS;

EID: 31544473458 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.8742 Document Type: Article

Times cited : (12)

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