Analysis of defect in extreme UV lithography mask using a modal method based on nodal B-spline expansion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6458-6462

  Edee, Kofi ^a,b   Schiavone, Patrick ^a   Granet, Gérard ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

Electromagnetic modeling; EUV mask; MMFE; Modal method; Wavelet

Indexed keywords

CONVERGENCE OF NUMERICAL METHODS; DEFECTS; ELECTROMAGNETISM; FUNCTIONS; MATHEMATICAL MODELS; ULTRAVIOLET RADIATION;

ELECTROMAGNETIC MODELING; EUV MASK; MODAL METHOD;

LITHOGRAPHY;

EID: 31544440430     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6458     Document Type: Article

References (6)

1. M. G. Moharam and T. K. Gaylord: J. Opt. Soc. Am. A 3 (1986) 1780.
2. P. Lalanne and G. Morris: J. Opt. Soc. Am. A 13 (1996) 779.
3. G. Granet and B. Guizal: J. Opt. Soc. Am. A 13 (1996) 1019.
4. G. Granet: Opt. and Quantum Electron. 33 (2001) 471.
5. P. Schiavone, G. Granet and J. Y. Robic: Microelectron. Eng. 57-58 (2001) 497.
6. M. Besacier, P. Schiavone, G. Granet and V. Farys: Proc. SPIE 5037 (2003) 822.