Modeling of micro- and nano-scale domain recording by high-voltage atomic force microscopy in ferroelectric semiconductors

Physica B: Condensed Matter

Volumn 373, Issue 1, 2006, Pages 54-63

  Morozovska, Anna N ^a   Eliseev, Eugene A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

Atomic force probe microscopy; Depolarization field; Ferroelectrics; Micro and nano domains

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; INTERFACIAL ENERGY; MATHEMATICAL MODELS; PERMITTIVITY; POLARIZATION; SEMICONDUCTOR MATERIALS; TENSORS;

ATOMIC FORCE PROBE MICROSCOPY; DEPOLARIZATION FIELD; FERROELECTRIC SEMICONDUCTORS; MICRO- AND NANO-DOMAINS;

FERROELECTRIC MATERIALS;

EID: 31544436591     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.11.049     Document Type: Article

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