Field decrystallization and structural modifications of highly doped silicon in a 2.45-GHz microwave single-mode cavity

Journal of Materials Research

Volumn 19, Issue 6, 2004, Pages 1599-1602

  Peelamedu, Ramesh ^a   Roy, Rustum ^a   Agrawal, Dinesh ^a   Drawl, William ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COAGULATION; CRYSTAL LATTICES; DOPING (ADDITIVES); GRINDING (COMMINUTION); MELTING; MICROWAVES; POWDERS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

DECRYSTALLIZATION; MICROWAVE SINGLE MODE CAVITY; STRUCTURAL MODIFICATIONS; SUBMELTING TEMPERATURES;

SILICON;

EID: 3142783609     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0223     Document Type: Article

References (13)

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