Analysis and design of superjunction power MOSFET: CoolMOS™ for improved on resistance and breakdown voltage using theory of novel voltage sustaining layer

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 1, Issue , 2002, Pages 209-212

  Kondekar, P N ^a   Patil, M B ^a   Parikh, C D ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAK DOWN VOLTAGE; CONVENTIONAL POWER; COOLMOS; DOPING LEVELS; DRIFT LAYERS; ON-RESISTANCE; RATE OF REDUCTION; SUPER-JUNCTION POWER MOSFET;

MICROELECTRONICS;

EID: 3142782275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003176     Document Type: Conference Paper

References (9)

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2. L. Lorenz, M. Mar, J.P. Stencil and A. Bachofner, "Drastic Reduction of On-Resistance with CoolMOS", PCIM Europe, vol.5, 1998.
3. G.Deboy et. al., "A new generation of high voltage MOSFETs breaks the limit of silicon", Proc. IEDM, p.683, 1998.
4. D. A. Grant, Power MOSFETs Theory and Applications, John Wiley & Sons. 1989.
5. P. N. Kondekar, M. B. Patil and C.D. Parikh, "Breakdown voltage and on resistance of superjunction power MOSFET: CoolMOS" Procd. IWPSD-2001, vol.1, pp. 440-443
6. P. N. Kondekar, M. B. Patil and C. D. Parikh,"Analytical design methodology of a novel drift layer for Superjunction power MOSFET:CoolMOSTM ", Procd. IWPSD-2001, vol.2, pp. 1304-1306
7. B. J. Baliga, Modern Power Devices, John & Wiley Inc.,1987.
8. Integrated System Engineering, ISE-TCAD Manuals, AG, Zurich, Switzerland 1999
9. P. Shenoy, A. Bhalla and G. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of super junction MOSFET", Proc. ISPSD'98, pp.99-102, 1999.