Molecular Beam Epitaxy and Properties of Cr-Doped GaSb

Journal of Superconductivity and Novel Magnetism

Volumn 17, Issue 3, 2004, Pages 349-352

  Abe, E ^a   Sato, K ^a   Matsukura, F ^a   Zhao, J H ^a   Ohno, Y ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Cr; Gasb; Iii V semiconductor; Magnetic semiconductor; Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHROMIUM COMPOUNDS; DOPING (ADDITIVES); FERROMAGNETISM; GALLIUM COMPOUNDS; HIGH ENERGY ELECTRON DIFFRACTION; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); THERMAL EFFECTS;

BEAM FLUX RATIOS; FERROMAGNETIC ZINCBLENDS; MAGNETIC IONS; MAGNETOTRANSPORT MEASUREMENTS;

MAGNETIC SEMICONDUCTORS;

EID: 3142757191     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: 10.1023/b:josc.0000034257.19841.be     Document Type: Article

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