Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range

Optical Engineering

Volumn 43, Issue 5, 2004, Pages 1014-1015

  Refaat, Tamer F ^a   Abedin, M Nurul ^b   Bhat, Ishwara B ^c   Dutta, Parth S ^c   Singh, Upendra N ^b  

^a SCIENCE AND TECHNOLOGY CORPORATION   (United States)

^b NASA LANGLEY RESEARCH CENTER   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FILMS; PHOTODIODES; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; VOLTAGE MEASUREMENT;

EPITAXIAL FILM; GALLIUM ANTIMONIDE; INDIUM GALLIUM ANTIMONIDE; SPECTRAL RESPONSE;

INFRARED DETECTORS;

EID: 3142744746     PISSN: 00913286     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1695566     Document Type: Article

References (7)

1. P. F. Ambrico, A. Amodeo, P. D. Girolamo, and N. Spinelli, "Sensitivity analysis of differential absorption lidar measurements in the mid-infrared region," Appl. Opt. 39(36), 6847-6865 (2000).
2. J. Benoit, M. Boulou, G. Soulage, A. Joullie, and H. Mani, "Performance evaluation of GaAlAsSb/GaInAsSb SAM-APDs for high bit rate transmissions in the 2.5 μm wavelength region," J. Opt. Commun. 9(2), 55-58 (1988).
3. F. Pascal-Delannoy, N. J. Mason, G. Bougnot, P. J. Walker, J. Bougnot, A. Giani, and G. G. Allogho, "InGaSb/GaSb photodiodes grown by MOVPE," J. Cryst. Growth 124(1-4), 409-414 (1992).
4. C. H. Su, Y. K. Su, and F. S. Juang, "GaSb/InGaSb strained-layer quantum wells by MOCVD," Solid-State Electron. 35(10), 1385-1390 (1992).
5. S. M. Chen, Y. K. Su, and Y. T. Lu, "Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector," IEEE Electron Device Lett. 14(9), 447-449 (1993).
6. C. W. Hitchcock, R. J. Gutmann, J. M. Borrego, I. Bhat, and G. W. Charache, "Antimonide-base devices for thermophotovoltaic applications," IEEE Trans. Electron Devices 46(10), 2154-2161 (1999 ).
7. T. Refaat, G. Halama, and R. DeYoung, "Comparison between super low ionization ratio and reach through avalanche photodiode structures," Opt. Eng. 39(10), 2642-2650 (2000).