The influence of bulk parameters on the switching behavior of FWDs for traction application

Proceedings of the International Conference on Microelectronics

Volumn 24 I, Issue , 2004, Pages 153-156

  Feisl, H P ^a   Falck, E ^b   Pfaffenlehner, M ^b   Lutz, J ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DOPING; FREE WHEELING DIODES (FWD); ROOM TEMPERATURE; VOLTAGE DROP;

CATHODES; COMPUTER SIMULATION; ELECTRIC INDUCTORS; ELECTRIC LOSSES; ELECTRIC TRACTION; NUMERICAL METHODS; SEMICONDUCTOR DOPING;

DIODES;

EID: 3142743823     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. "Reverse Recovery Process in Silicon Power Rectifiers", HJ.Benda, E.Spenke, Proceedings of the IEEE, Vol. 55, 8.Aug. 1967, pp. 1331-1354.
2. ISE Manual, ISE Integrated Systems Engineering AG, ISETCAD, Zurich, Switzerland.
3. "On the Destruction Limit of Si Power Diodes During Reverse Recovery With Dynamic Avalanche", M.Domeij, Josef Lutz, and D.Silber, IEEE Transactions on Electron Devices, Vol. 50, No.2, Feb. 2003, pp. 486-493.