Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction

Zeitschrift fur Kristallographie

Volumn 219, Issue 4, 2004, Pages 201-204

  Jenichen, Bernd ^a   Kaganer, Vladimir M ^a   Herrmann, Claudia ^a   Wan, Li ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Magnetic materials; MnAs GaAs(001) layers; Molecular beam epitaxy; X ray diffraction; X ray reflectivity

Indexed keywords

ARSENIC DERIVATIVE; FERROMAGNETIC MATERIAL; GALLIUM; MANGANESE DERIVATIVE;

ACCURACY; CALCULATION; CONFERENCE PAPER; ENERGY; FILM; PHASE TRANSITION; STRUCTURE ANALYSIS; TECHNIQUE; X RAY DIFFRACTION;

EID: 3142711491     PISSN: 00442968     EISSN: None     Source Type: Journal    
DOI: 10.1524/zkri.219.4.201.30435     Document Type: Conference Paper

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