Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 560-563

  Chen, Z ^a   Lei, Y ^b   Chew, H G ^a   Teo, L W ^b   Choi, W K ^a,b   Chim, W K ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

Author keywords

A1. Memory effect; A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting germanium

Indexed keywords

ALUMINA; ANODIC OXIDATION; ELECTRIC CHARGE; MASKS; MATRIX ALGEBRA; NANOSTRUCTURED MATERIALS; PHOSPHORIC ACID; SEMICONDUCTING GERMANIUM; SILICON COMPOUNDS; SILICON WAFERS;

ALUMINA MEMBRANE MASK; MEMORY EFFECT; NANODOTS; NANOMATERIALS;

SYNTHESIS (CHEMICAL);

EID: 3142710910     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.091     Document Type: Conference Paper

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