An accurate nonlinear MOSFET model for intermodulation distortion analysis

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 7, 2004, Pages 352-354

  Ó HAnnaidh, Breandán ^a   Brazil, Thomas J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

Advanced design system (ADS); Intermodulation distortion (IMD); Metal oxide semiconductor field effect transistors (MOSFETs); Wide band code division multiple access (WCDMA)

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERMODULATION; SEMICONDUCTOR DEVICES; SIGNAL PROCESSING;

ADVANCED DESIGN SYSTEM (ADS); INTERMODULATION DISTORTION (IMD); METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFET); WIDE-BAND CODE DIVISION MULTIPLE ACCESS (WCDMA);

MOSFET DEVICES;

EID: 3142698311     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.829285     Document Type: Article

References (12)

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