Improved prediction of the intermodulation distortion characteristics of MESFETs and PHEMTs via a robust nonlinear device model

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1998, Pages 749-752

  Cojocaru, Vicentiu I ^a   Brazil, Thomas J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HARMONIC ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION;

INTERMODULATION DISTORTION (IMD) PREDICTION;

INTERMODULATION;

EID: 0031628687     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)