SCOPUS 정보 검색 플랫폼

Volumn 201, Issue 8, 2004, Pages 1688-1691

Development of exchange bias in IrMn3 based tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYSTERESIS; ION EXCHANGE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SWITCHING; TUNNEL JUNCTIONS;

INTERLAYER COUPLINGS; MAGNETIZATION HYSTERESIS; TUNNEL BARRIERS;

IRIDIUM COMPOUNDS;

EID: 3142689103 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200304540 Document Type: Conference Paper

Times cited : (3)

References (5)

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2
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- M. Tsunoda, K. Nishikawa, S. Ogata, and M. Takahashi Appl. Phys. Lett. 80, 3135 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3135
- Tsunoda, M.¹ Nishikawa, K.² Ogata, S.³ Takahashi, M.⁴

3
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- W. H. Meiklejohn and C. P. Bean, Phys. Rev. 102, 1413 (1956).
- (1956) Phys. Rev. , vol.102 , pp. 1413
- Meiklejohn, W.H.¹ Bean, C.P.²

4
- 0033204099
- A. E. Berkowitz and K. Takano, J. Magn. Magn. Mater. 200, 552 (1999).
- (1999) J. Magn. Magn. Mater. , vol.200 , pp. 552
- Berkowitz, A.E.¹ Takano, K.²

5
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- L. Neel, C. R. Acad. Sci. 255, 1676 (1962).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.