157-nm-induced resist outgassing studied by film thickness loss and in-situ quadrupole mass spectrometry

Journal of Photopolymer Science and Technology

Volumn 17, Issue 4, 2004, Pages 671-673

  Matsui, Yoshinori ^a   Seki, Shu ^a   Tagawa, Seiichi ^a   Kishimura, Shinji ^b   Sasago, Masaru ^b  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

157 nm; Film thickness loss; Outgassing; Quadrupole mass spectrometry; Resist

Indexed keywords

ACID; ALCOHOL; CARBOXYLIC ACID; FLUORINE DERIVATIVE; HEXAFLUORO 2 PROPANOL; MONOMER; POLYMER;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL BOND; CHEMICAL INTERACTION; CHEMICAL REACTION; DEPROTECTION REACTION; DISSOCIATION; FILM; HYDROLYSIS; KINETICS; LITHOGRAPHY; MEASUREMENT; PHOTOCHEMISTRY; QUADRUPOLE MASS SPECTROMETRY; REACTION ANALYSIS; REFRACTION INDEX; TECHNIQUE; THICKNESS;

EID: 3142651436     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.17.671     Document Type: Article

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