Generation of radiation pressure in thermally induced ultrasonic emitter based on nanocrystalline silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2080-2082

  Hirota, Jun ^a   Shinoda, Hiroyuki ^b   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Nanocrystalline silicon; Radiation pressure; Ultrasonic emission

Indexed keywords

ACOUSTIC EMISSIONS; ANODIC OXIDATION; ELECTRIC DISTORTION; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; LASERS; MICROPHONES; NANOSTRUCTURED MATERIALS; SILICON; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THERMAL INSULATION;

NANOCRYSTALLINE SILICON; RADIATION PRESSURES; SOUND PRESSURE; ULTRASONIC EMISSIONS; ULTRASONIC EMITTERS;

ULTRASONIC DEVICES;

EID: 3142607186     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2080     Document Type: Conference Paper

References (4)

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4. T. Migita and N. Koshida: Jpn. J. Appl. Phys. 41 (2002) 2588.