Optical characteristics of In As/Ga As double quantum dots grown by MBE with the indium-flush method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2083-2087

  Yamauchi, Shohgo ^a   Komori, Kazuhiro ^a   Sugaya, Takeyoshi ^a   Goshima, Keishiro ^a  

^a NONE

Author keywords

Double quantum dots; Electron phonon interaction; InAs; Indium Flush; MBE; Photoluminescence; Photoluminescence excitation; Tunneling time

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC DISTORTION; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DOUBLE QUANTUM DOTS; ELECTRON PHONON INTERACTIONS; INDIUM-FLUSH; PHOTOLUMINESCENCE EXCITATIONS; TUNNELING TIME;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142599154     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2083     Document Type: Conference Paper

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