Electrical line monitoring in a 300 mm copper fab

Semiconductor International

Volumn 26, Issue 8, 2003, Pages 80-90

  Soucek, Matt ^a   Anderson, Justin ^a   Chahal, Harry ^a   Price, David W ^b   Boahen, Kwame ^b   Breaux, Louis ^b  

^a TEXAS INSTRUMENTS   (United States)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM CURRENTS; ELECTRICAL DEFECTS; EXCURSION DETECTION; PRODUCTION MONITORING;

CONTAMINATION; DEFECTS; ELECTRIC LINES; ELECTRIC POTENTIAL; ELECTRON BEAMS; INSPECTION; OPTIMIZATION; SILICON WAFERS;

OPTICAL DEVICES;

EID: 3142556446     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. R. Cappel and J. Rathert, "The Advantages of In-line Electron-Beam Wafer Inspection," Yield Management Solutions, Summer 2000, p. 8.
2. R. Nasongkhla, J.G. Shanthikumar, R.K. Nurani and M. McIntyre, "Multivariate Control Approach: A Means to Reducing α and β errors in Inline Detection of Yield Excursions," Proc. ISSM98, p. 253 (1998).
3. R. K. Nurani, R. Akella and A.J. Strojwas, "In-Line Defect Sampling Methodology in Yield Management: An Integrated Framework," IEEE Transactions on Semiconductor Manufacturing, November 1996, p. 506. For further details about model inputs and assumptions, please contact author Louis Breaux.
4. M. Soucek, "E-Beam Inspection Line Monitoring Methodology and Applications for a 300mm Copper Fab," YMS Europa, April 2003.