Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Pérot transmission oscillations

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7584-7587

  Revin, D G ^a,d   Wilson, L R ^a   Carder, D A ^a   Cockburn, J W ^a   Steer, M J ^a   Hopkinson, M ^a   Airey, R ^a   Garcia, M ^b   Sirtori, C ^b   Rouillard, Y ^c   Barate, D ^c   Vicet, A ^c  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c UNIV MONTPELLIER   (France)

^d INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; ELECTROMAGNETIC WAVE POLARIZATION; ELECTROMAGNETIC WAVE REFLECTION; LIGHT SCATTERING; NATURAL FREQUENCIES; OPTICAL RESOLVING POWER; OPTICAL RESONATORS; OPTICAL WAVEGUIDES; PLASMA OSCILLATIONS;

FABRY-PEROT TRANSMISSION OSCILLATIONS; OPTICAL LOSSES; OPTICAL TRANSITIONS; QUANTUM CASCADE LASERS (QCL);

SEMICONDUCTOR LASERS;

EID: 3142527186     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738523     Document Type: Article

References (15)

1. See e.g., J. C. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, D. Z. Garbuzov, and W. K. Chan, Appl. Phys. Lett. 81, 3146 (2002); M. Aydaraliev et al., ibid. 81, 1166 (2002).
2. See e.g., J. C. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, D. Z. Garbuzov, and W. K. Chan, Appl. Phys. Lett. 81, 3146 (2002); M. Aydaraliev et al., ibid. 81, 1166 (2002).
3. D. A. Yarekha et al., Electron. Lett. 36, 537 (2000).
4. J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 72, 680 (1998).
5. R. Kohler, C. Gmachl, A. Tredicucci, F. Capasso, D. L. Sivco, S. N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 76, 1092 (2000).
6. C. Becker, I. Prevot, X. Marcadet, B. Vinter, and C. Sirtori, Appl. Phys. Lett. 78, 1029 (2001).
7. B. W. Hakki and T. L. Paoli, J. Appl. Phys. 46, 1299 (1975).
8. See e.g., C. Sirtori, P. Kruck, S. Barbieri, H. Page, J. Nagle, M. Beck, J. Faist, and U. Oesterle, Appl. Phys. Lett. 75, 3911 (1999).
9. J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, Appl. Phys. Lett. 75, 2527 (1999).
10. P. C. Mogensen, P. M. Smowton, and P. Blood, Appl. Phys. Lett. 71, 1975 (1997).
11. For the majority of semiconductors the thermal expansion coefficient is usually less by a factor of 10 than the thermal coefficient of refractive index, see e.g., A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP (Science and Encyclopedia Publisher, Vilnius, 1994).
12. M. Seto, A. Shahar, R. J. Deri, W. J. Tomlinson, and A. Yi-Yan, Appl. Phys. Lett. 56, 990 (1990).
13. K. H. Park et al., J. Appl. Phys. 78, 6318 (1995).
14. R. G. Walker, Electron. Lett. 21, 581 (1985).
15. Intersubband Transitions in Quantum Wells, Physics and Device Application I, Semiconductor and Semimetals, edited by H. C. Liu and F. Capasso (Academic, San Diego, 2000), Vol. 62, p. 11.