Photoluminescence of Yb3+-doped CuInS2 single crystals prepared by In-flux and chemical vapor transport methods

Journal of Alloys and Compounds

Volumn 408-412, Issue , 2006, Pages 791-795

  Tsujii, N ^a   Imanaka, Y ^a   Takamasu, T ^a   Kitazawa, H ^a   Kido, G ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Crystal growth; Impurities in semiconductors; Luminescence; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); COPPER COMPOUNDS; CRYSTAL GROWTH; DOPING (ADDITIVES); MAGNETIC PROPERTIES; MAGNETIC SUSCEPTIBILITY; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; YTTERBIUM COMPOUNDS;

CHEMICAL VAPOR TRANSPORT; IMPURITIES IN SEMICONDUCTORS;

PHOTOLUMINESCENCE;

EID: 31144478766     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.01.103     Document Type: Conference Paper

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