Thermal conductivity of B-C-N and BN nanotubes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1883-1886

  Chang, C W ^a,b   Han, Wei Qiang ^c   Zettl, A ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE (BN) NANOTUBE; ISOTOPE DISORDER EFFECT;

BORON COMPOUNDS; CARBON NANOTUBES; ISOTOPES; THERMAL CONDUCTIVITY;

NANOTUBES;

EID: 31144469838     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2008266     Document Type: Article

References (22)

1. A. Balandin and K. L. Wang, Phys. Rev. B 58, 1544 (1998).
2. N. G. Chopra, Science 269, 966 (1995).
3. K. Suenaga, Science 278, 653 (1997).
4. J. Cumings, W. Mickelson, and A. Zettl, Solid State Commun. 126, 359 (2003).
5. T. Yamamoto, S. Watanabe, and K. Watanabe, Phys. Rev. Lett. 92, 075502 (2004).
6. Y. Xiao, Phys. Rev. B 69, 205415 (2004).
7. P. Kim, Phys. Rev. Lett. 87, 215502 (2001).
8. S. Berber, Y. K. Kwon, and D. Tomanek, Phys. Rev. Lett. 84, 4613 (2000).
9. S. L. Rumyantsev, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001).
10. W. Q. Han, Appl. Phys. Lett. 73, 3085 (1998).
11. W. Q. Han, Appl. Phys. Lett. 81, 1110 (2002).
12. J. Wu, Nano Lett. 4, 647 (2004).
13. E. K. Sichel, Phys. Rev. B 13, 4607 (1976).
14. W. Yi, Phys. Rev. B 59, R9015 (1999).
15. J. Hone, Phys. Rev. B 59, R2514 (1999).
16. J. Hone, Appl. Phys. Lett. 77, 666 (2000).
17. L. Wirtz, Phys. Rev. B 68, 045425 (2003).
18. J. Hone, Top. Appl. Phys. 80, 273 (2001).
19. D. Y. Li, Appl. Phys. Lett. 83, 2934 (2003).
20. D. Y. Li, Appl. Phys. Lett. 83, 3186 (2003).
21. E. Hernandez, Phys. Rev. Lett. 80, 4502 (1998).
22. D. T. Morelli, J. P. Heremans, and G. A. Slack, Phys. Rev. B 66, 195304 (2002).