Effect of film thickness on the ferroelectric properties of Pb (Zr 0.2 Ti0.8)O3 thin films for nano-data storage applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1901-1904

  Lee, Woo Sung ^a   Ahn, Kyoung Chan ^a   Yoon, Soon Gil ^a   Kim, Chang Soo ^b  

^a Chungnam National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; HYSTERESIS; LEAKAGE CURRENTS;

FILM THICKNESS; LEAKAGE CURRENT DENSITY;

LEAD;

EID: 31144469837     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2008270     Document Type: Article

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