Dielectric and EPR investigations of stoichiometry and interface effects in silicon carbide nanoparticles

Journal of Physics Condensed Matter

Volumn 18, Issue 4, 2006, Pages 1143-1155

  Tabellout, M ^a   Kassiba, A ^a   Tkaczyk, S ^b   Laskowski, L ^b   Swiatek, J ^b  

^a UNIVERSITÉ DU MAINE   (France)

^b Institute of Physics WSP Czestochowa   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON SPIN RESONANCE SPECTROSCOPY; INTERFACES (MATERIALS); RELAXATION PROCESSES; SILICON CARBIDE; STOICHIOMETRY;

QUASI-INSULATING STATES; SUPERCONDUCTING STATES;

NANOSTRUCTURED MATERIALS;

EID: 31144443006     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/4/003     Document Type: Article

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