Modeling kinetics of gate oxide reliability using stretched exponents

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2002, Pages 421-422

  Krishnan, Mahesh ^a   Kol'dyaev, Victor ^a  

^a PDF SOLUTIONS INC   (United States)

Author keywords

Degradation; Electron traps; Hot carriers; Human computer interaction; Interface states; Kinetic theory; MOS devices; Predictive models; Stress; Tail

Indexed keywords

DEGRADATION; ELECTRON TRAPS; EXPONENTIAL FUNCTIONS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HOT CARRIERS; HUMAN COMPUTER INTERACTION; INTERFACE STATES; KINETIC THEORY; KINETICS; MOS DEVICES; RELIABILITY; STRESSES;

GATE OXIDE RELIABILITY; HOT CARRIER INJECTION; KINETIC TRANSITION; NEGATIVE BIAS TEMPERATURE INSTABILITY; PREDICTIVE MODELS; STRETCHED EXPONENTIAL; STRETCHED EXPONENTIAL FUNCTIONS; TAIL;

INTEGRATED CIRCUITS;

EID: 30844468009     PISSN: 15417026     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996676     Document Type: Article

References (8)

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