Studies on growth mechanism of HgCdTe epilayer on Si grown by HWE

Journal of Materials Science

Volumn 40, Issue 24, 2005, Pages 6453-6458

  Yang, Aiming ^a   Tang, Libin ^b   Wu, Changshu ^b   Yang, Jiaming ^c   Wu, Xinghui ^a  

^a YUNNAN UNIVERSITY   (China)

^b KUNMING INSTITUTE OF PHYSICS   (China)

^c The Technique CenterYunnan Metallurgy CoLtd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH KINETICS; HETEROJUNCTIONS; SILICON; X RAY DIFFRACTION;

COLUMNAR GROWTH; HGCDTE EPILAYERS; HOT WELL EPITAXY (HWE); LATTICE MISMATCH;

MERCURY COMPOUNDS;

EID: 30744443498     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-005-1710-8     Document Type: Article

References (9)

1. S. BERNARDI, SPIE 2816 (1996) 2.
2. T. Y. GORBACH, P. S. SMERTENKO, S. V. SVECHNIKOV, M. KUZMA, G. WISZ and K. CIACH, Appl. Surf. Sci. 154/155 (2000) 495.
3. V. C. FARMER, in "The Infrared Spectra of Minerals" (Mineralogical Society, London, 1974) p.398.
4. SWARTHMORE, in "Powder Diffraction File. Inorganic and Organic" (JCPDS-International Centre for Diffraction Data, Pennsylvania, 1974) (150770) and (320665).
5. A. MILLION, N. K. DHAR and J. H. DINAN, J. Crystal. Growth 159 (1996) 76.
6. R. R. HAO, X. Y. FANG and S. C. NIU, in "Inorganic Chemistry Series Vol.3, Carbon Silicon Germanium Subgroup" (Science Press, Beijing,1998) p.131.
7. G. Y. HONG, in "Inorganic Solid Chemistry" (Science Press, Beijing, 2002) p. 271.
8. J. P. FAURIE, R. SPORKEN, S. SIVANANTHAN and M. D. LANGE, J. Crystal Growth 111 (1991) 698.
9. W. T. ZHENG, in "Thin film materials and thin film technology" (Chemical Industry Press, Beijing, 2004) p. 162.