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Volumn 862, Issue , 2005, Pages 159-170

Real-time spectroscopic ellipsometry as an in-situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELLIPSOMETRY; EPITAXIAL GROWTH; HYDROGENATION; PHOTOVOLTAIC EFFECTS;

EID: 30544453554     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a14.2     Document Type: Conference Paper
Times cited : (3)

References (19)
  • 5
    • 30544432889 scopus 로고    scopus 로고
    • For more details regarding SHJ devices and performance, please see the paper A23.5 by T. Wang et al. in these proceedings
    • For more details regarding SHJ devices and performance, please see the paper A23.5 by T. Wang et al. in these proceedings.
  • 10
    • 0021558454 scopus 로고
    • J.I. Pankove, Ed., Academic, New York
    • G.D. Cody, in Semiconductors and Semimetals, Vol. 21 B, J.I. Pankove, Ed., p11, Academic, New York, 1984.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 11
    • Cody, G.D.1
  • 13
    • 30544450244 scopus 로고    scopus 로고
    • growth model for HWCVD discussing H abstraction or dangling bonds
    • growth model for HWCVD discussing H abstraction or dangling bonds


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.