Photovoltaic effect in the anisotype gase-inse heterojunctions under pressure

Materials Research Society Symposium Proceedings

Volumn 865, Issue , 2005, Pages 113-117

  Drapak, S I ^a   Vorobets, M O ^a   Kovalyuk, Z D ^a  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); PHOTOVOLTAIC CELLS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SHORT CIRCUIT CURRENTS; OPEN CIRCUIT VOLTAGE;

MECHANICAL PRESSURE; OPTICAL CONTACTS; OPTICAL CONTACT; PHOTOCONVERSION EFFICIENCY;

HETEROJUNCTIONS;

EID: 30544453444     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-865-f5.1     Document Type: Conference Paper

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