A novel NO2 gas sensor based on bis[phthalocyaninato] samarium complex/silicon hybrid charge-flow transistor

IEEE Sensors Journal

Volumn 3, Issue 6, 2003, Pages 796-800

  Xie, Dan ^a   Jiang, Yadong ^b   Ren, Tianling ^a   Liu, Lilian ^a  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Bis phthalocyaninato samarium complex; Charge flow transistor (CFT); Gas sensor; Langmuir blodgett (LB) film; Metal oxide semiconductor field effect transistor (MOSFET); Nitrogen dioxide

Indexed keywords

DEPOSITION; LANGMUIR BLODGETT FILMS; MOSFET DEVICES; NITRATES; THERMAL EFFECTS; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CHARGE-FLOW TRANSISTOR (CFT); FILM-FORMING MATERIALS; SAMARIUM COMPLEX;

CHEMICAL SENSORS;

EID: 3042780061     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2003.820363     Document Type: Conference Paper

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