Relaxor ferroelectric PMN-32%PT crystals under stress and electric field loading: I-32 mode measurements

Acta Materialia

Volumn 52, Issue 13, 2004, Pages 3849-3857

  McLaughlin, Elizabeth A ^a   Liu, Tieqi ^b   Lynch, Christopher S ^b  

^a NAVAL UNDERSEA WARFARE CENTER   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Ferroelectric; Piezoelectric; Relaxor single crystal

Indexed keywords

COMPOSITION; CRACK INITIATION; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRIC FIELD EFFECTS; FERROELECTRIC MATERIALS; PHASE TRANSITIONS; PIEZOELECTRICITY; POLARIZATION; SWITCHING; TEMPERATURE; THERMAL LOAD; ULTRASONIC IMAGING;

DOMAIN STRUCTURES; LINEAR REGIONS; MECHANICAL LOADS; RELAXOR SINGLE CRYSTAL;

STRESS ANALYSIS;

EID: 3042754257     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2004.04.034     Document Type: Article

References (40)

1. Uchino K. In: Proceedings of 4th International Conference on Electronic Ceramics and Applications. vol. 1, Germany, Aachen; 1994. p. 179.
2. Uchino K. Piezoelectric actuators and ultrasonic motors. 1996;Kluwer Academic Publishers, Boston.
3. Park S., Shrout T.R. IEEE Trans. Ultrason. Ferro. Freq. Control. 44:1997;1140.
4. Kobayashi T., Shimanuki S., Saitoh S., Yamashita Y. Jpn. J. Appl. Phys. 36:1997;272.
5. Shrout T., Park S.E., Lopath P., Meyer R., Ritter T., Shung K. Proc. SPIE. 3341:1998;174.
6. Kuwata J., Uchino K., Nomura S. Jpn. J. Appl. Phys. 21:1982;1298.
7. Park S., Shrout T.R. J. Appl. Phys. 82:1997;1804.
8. Uchino K. Solid State Ion. 108:1998;43.
9. Harada K., Shimanuki S., Kobayashi T., Saitoh S., Yamashita Y. Key Eng. Mater. 157-158:1999;95.
10. Liu S., Park S.-E., Shrout T.R., Cross L.E. J. Appl. Phys. 85:1999;2810.
11. Chen J, Panda R, Beck H, Gururaja R. In: The Tenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics; 2001. p. 233.
12. Viehland D., Amin A., Li J.F. Appl. Phys. Lett. 79:2001;1006.
13. Cao H., Fang B., Xu H., Luo H. Mater. Res. Bull. 37:2002;2135.
14. Zhao X., Fang B., Cao H., Guo Y., Luo H. Mater. Sci. Eng. B. 96:2002;254.
15. Nye J.F. Physcial properties of crystals: their representation by tensors and matrices. 1967;Oxford University Press, Oxford, London.
16. Liu T., Lynch C.S. Acta Mater. 51:2003;407.
17. Lu Y., Jeong D.-Y., Cheng Z.-Y., Shrout T., Zhang Q.M. Appl. Phys. Lett. 80:2002;1918.
18. Lu Y., Jeong D.-Y., Cheng Z.-Y., Viehland D. Appl. Phys. Lett. 78:2001;3109.
19. Noheda B., Cox D.E., Shirane G., Dong M., Ye Z.-G., Gao J. Phys. Rev. B. 66:2002;054104.
20. Ye Z.-G. Curr. Opin. Solid State Mater. Sci. 6:2002;35.
21. Singh A.K., Pandey D. Phys. Rev. B. 67:2003;064102.
22. Uesu Y., Yamada Y., Fujishiro K., Tazawa H., Enokido S., Kiat J.-M., et al. Ferroelectrics. 217:1998;319.
23. Fujishiro K., Vlokh R., Uesu Y., Yamada Y., Kiat J.-M., Dkhil B., et al. Jpn. J. Appl. Phys. 37:1998;5246.
24. Belegundu U., Du X.H., Cross L.E., Uchino K. Ferroelectrics. 221:1999;67.
25. Ye Z.-G., Dong M., Zhang L. Ferroelectrics. 229:1999;223.
26. Ye Z.-G., Dong M. J. Appl. Phys. 87:2000;2312.
27. Bertram R., Reck G., Uecker R. J. Crystallogr. Growth. 253:2003;212.
28. Ren W., Liu S.-F., Mukherjee B.K. Appl. Phys. Lett. 80:2002;3174.
29. Park S.-E., Hackenberger W. Curr. Opin. Solid State Mater. Sci. 6:2002;11.
30. Noheda B., Cox D.E., Shirane G., Guo R., Jones B., Cross L.E. Phys. Rev. B. 63:2001;014103.
31. Viehland D. J. Appl. Phys. 88:2000;4794.
32. Chen K.-P., Zhang X.-W., Luo H.-S. J. Phys.: Condens. Matter. 14:2002;571.
33. Viehland D., Li J.F. J. Appl. Phys. 92:2002;7690.
34. Samara G.A., Venturini E.L., Schmidt V.H. Appl. Phys. Lett. 76:2000;1327.
35. Viehland D., Powers J. Appl. Phys. Lett. 78:2001;3112.
36. Shang J.K., Tan X. Acta Metall. Mater. 49:2001;2993.
37. Viehland D., Powers J. J. Appl. Phys. 89:2001;1820.
38. Viehland D., Li J.F., Gittings K., Amin A. Appl. Phys. Lett. 83:2003;132.
39. Tu C.-S., Shih I.-C., Schmidt V.H., Chien R. Appl. Phys. Lett. 83:2003;1833.
40. Tu C.S., Tsai C.L., Chen J.S., Schmidt V.H. Phys. Rev. B. 65:2002;104113.