Understanding gate oxide materials: ELNES of Hf and Zr compounds

Institute of Physics Conference Series

Volumn 179, Issue , 2004, Pages 79-82

  Hamilton, D A ^a   Craven, A J ^a   MacKenzie, M ^a   McComb, D W ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY NEAR-EDGE STRUCTURE (ELNES); FERMI RULES; GATAN ENFINA ELECTRON SPECTROMETERS; X-RAY ABSORPTION NEAR-EDGE STRUCTURES (XANES);

ABSORPTION; ALGORITHMS; APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; FERMI LEVEL; GREEN'S FUNCTION; LEAKAGE CURRENTS; OXIDE SUPERCONDUCTORS; OXYGEN; PERMITTIVITY; SIGNAL TO NOISE RATIO; SILICATES; X RAYS; ZIRCONIUM COMPOUNDS;

HAFNIUM COMPOUNDS;

EID: 3042733924     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Ostanin S, Craven A J, McComb D W, Vlachos D, Alavi A, Finnis M W and Paxton A T 2000 Pays. Rev. B 62 14728-14735.
2. McComb D W1996 Phys. Rev. B 54 7094-7102.
3. Wu Z Y and Seifert F 1996 Solid State Comm. 99 773-778
4. Muller D A, Singh D J and Sikox J 1998 Phys. Rev. B 57 8181-8202.
5. McComb D W, Brydson R, Hansen P L and Payne R S 1992 J. Phys. Condens. Matter 4 8363-8374.