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Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4675-4677

Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes

(4) Gan, Kian Giap a Sun, Chi Kuang b DenBaars, Steven P a Bowers, John E a

a University of California (United States)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; CONDUCTION BAND (CB); OPTICAL TRANSITIONS; VALENCE BAND (VB);

BAND STRUCTURE; CRYSTALS; ELECTROLUMINESCENCE; ELECTRON SCATTERING; FINITE DIFFERENCE METHOD; LASER PULSES; LIGHT INTERFERENCE; LIGHT POLARIZATION; OPTOELECTRONIC DEVICES; PHONONS; PHOTONS; RELAXATION PROCESSES; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 3042684775 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1760211 Document Type: Article

Times cited : (22)

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