Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 685-686

  Lee, Jae Sung ^a   Lyding, Joseph W ^b   Hess, Karl ^b  

^a Uiduk University   (South Korea)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Deuterium; Hydrogen; Negative bias temperature instability; Oxide trap

Indexed keywords

CONDUCTION BANDS; NEGATIVE-BIAS-TEMPERATURE INSTABILITY; OXIDE FILMS; OXIDE TRAPS;

ANNEALING; CMOS INTEGRATED CIRCUITS; DEGRADATION; DEUTERIUM; HOLE TRAPS; HYDROGEN; HYDROGEN BONDS; THIN FILMS;

MOSFET DEVICES;

EID: 3042658178     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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