Through wafer interconnects on active pMOS devices

IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

Volumn , Issue , 2004, Pages 82-84

  Johnson, Vaughn N ^a   Jozwiak, Jim ^a   Moll, Amy ^a  

^a Boise State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSTALK; ELECTROPLATING; ION BOMBARDMENT; MICROELECTRONICS; PASSIVATION; PHOTOLITHOGRAPHY; PHOTORESISTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; TRANSISTORS;

CHEMICAL MECHANICAL PLANARIZATION (CMP); INDUCTIVELY COUPLED PLASMA ETCHER (ICP); PMOS DEVICES; THROUGH-WAFER INTERCONNECTS (TWI);

INTEGRATED CIRCUITS;

EID: 3042655502     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Moll, A. J., Burkett, S.L, Qiao, X., Hofhine M., Oxford, R., Temple, D., and Stoner, B., "Advance Processing Techniques for Through-Wafer Interconnects," IEE Workshop on Microelectronics and Electron Devices, October 25, 2002
2. Craigie, C.J.D, Burkett, S., Sheehan, T., Johnson, V.N., Moll, A.J., and Knowlton, W.B., "Polymer Thickness Effects on Bosch Etch Profiles," Proc A VSICMI Conf. 210, pp. 83 -88, 2002
3. th biennial, pp. 338-339, June 30 - July 2 2003