2.4GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18μm TSMC CMOS

IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

Volumn , Issue , 2004, Pages 52-54

  Kunz, E ^a   Parke, S ^a  

^a BOISE STATE UNIVERSITY   (United States)

Author keywords

Low Noise Amplifier (LNA); Noise Factor (NF)

Indexed keywords

LOW-NOISE AMPLIFIERS (LNA); NOISE FACTORS (NF); PORTABLE ELECTRONICS;

AMPLIFIERS (ELECTRONIC); BANDWIDTH; CAPACITORS; COMPUTER SIMULATION; DIGITAL SIGNAL PROCESSING; FREQUENCIES; PRINTED CIRCUIT DESIGN; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 3042612303     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. R.G. Meyer and W.D.Mack, "A 1-GHz Bi-CMOS RF front-end IC" IEEE J. Solid State Circuits, vol. 29, pp.350-355, Mar. 1994.
2. D.K. Shaeffer and T.H. Lee, "A 1.5v, 1.5GHz CMOS Low Noise Amplifier," IEEE Journal of Solid State Circuits, vol..32, no.5, pp.745-759, May 1997.
3. G. Gramegna, M. Paparo, "A Sub 1 dB NF 2.3kV ESD-Protected 900-MHz CMOS LNA, IEEE Journal of Solid State Circuits, vol. 36, NO.7, July 2001.