Enhancement of high temperature thermoelectric properties of intermetallic compounds based on a Skutterudite IrSb3 and a half-Heusler TiNiSb

Science and Technology of Advanced Materials

Volumn 5, Issue 4, 2004, Pages 485-489

  Kim, S W ^a,b   Kimura, Y ^a   Mishima, Y ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carrier concentration; Figure of merit; Half Heusler; Skutterudite; Thermal conductivity; Thermoelectricity

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ENERGY CONSERVATION; HARMONIC ANALYSIS; INTERMETALLICS; OPTIMIZATION; THERMAL CONDUCTIVITY; THERMOELECTRICITY; X RAY DIFFRACTION ANALYSIS;

FIGURE OF MERIT; HALF-HEUSLER; SKUTTERUDITE; THERMOELECTRIC PROPERTIES;

IRIDIUM COMPOUNDS;

EID: 3042594757     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2004.02.006     Document Type: Article

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