Measurement and modelling of high performance lateral p-i-n photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5445, Issue , 2004, Pages 114-119

  Giziewicz, W ^a   Choy, H K H ^a   Fonstad Jr , C G ^a   Prasad, S ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

High speed measurement; Modelling; p i n photodiode

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS; MESFET DEVICES; NATURAL FREQUENCIES; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES;

FREQUENCY RESPONSES; HIGH SPEED MEASUREMENT; METAL SEMICONDUCTOR DIODES; P-I-N PHOTODIODES;

PHOTODETECTORS;

EID: 3042542846     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.558399     Document Type: Conference Paper

References (2)

1. J. F. Ahadian, Development of a Monolithic Very Large Scale Optoelectronic Integrated Circuit Technology. PhD thesis, Massachusetts Institute of Technology, Cambridge, MA, Feb. 2000.
2. H.K.H. Choy, M. Kircherer, B. Ruedlinger, K. Sundararajan, J. Ahadian, J. Mikkelson, S. Prasad, C.G. Fonstad Jr., "High performance lateral p-i-n photodetectors realized in a standard commercial gaas ic processs," in Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices, pp. 797-803, 2001.