High performance lateral p-i-n photodetectors realized in a standard commercial GaAs IC process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4746 II, Issue , 2002, Pages 797-803

  Choy, H K H ^a   Kircherer, M ^a   Rudlinger, B ^a   Sundararajan, K ^a   Ahadian, J ^a   Mikkelson, J ^a   Prasad, S ^a   Fonstad Jr , C G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MESFET DEVICES; PHOTOCURRENTS; PHOTODIODES; PHOTOREACTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

DARK CURRENT; GALLIUM ARSENIDE INTEGRATED CIRCUIT PROCESS; METAL-SEMICONDUCTOR-METAL PHOTODETECTOR; PHOTORESPONSE; TUBS;

PHOTODETECTORS;

EID: 0036403974     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. F. Ahadian, Development of a Monolithic Very Large Scale Optoelectonic Integrated Circuit Technology, Ph.D. Thesis, Dept. of Electrical Engineering and Computer Science, Mass. Inst. of Technology, Cambridge, MA, February 2000.
2. Vitesse Semiconductor Corporation, Camarillo, CA 93012, USA
3. T. Yoshida, Y. Ohtomo, and M. Shimaya, "A Novel p-i-n Photodetector Fabricated on SIMOX for 1 GHz 2V CMOS OEICs," 1998 IEDM Technical Digest (IEEE, Piscataway, NJ, 1998), pp. 29-32.
4. K. Sundararajan, Characterization of Lateral p-i-n Photodetectors Fabricated by Vitesse HGaAs IV Process, M.S. Thesis, Dept. of Electrical and Computer Eng., Northeastern Univ., Boston, MA, 2000.